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See Technical Specifications

2SD2655WM-TL-E +BOM

High-quality semiconductor solution for demanding application

Manufacturer:

RENESAS
Mfr.Part #:

2SD2655WM-TL-E
Datasheet:

2SD2655WM-TL-E Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Pin Count:

3
Reach Compliance Code:

compliant

2SD2655WM-TL-E General Description

The 2SD2655WM-TL-E is a versatile power transistor part of Toshiba's esteemed 2SD series. With a maximum collector current of 15A and a collector-emitter voltage of 60V, this silicon NPN epitaxial planar type transistor is designed for medium-power applications. Housed in a TO-3P(W) package, it ensures efficient heat dissipation and mechanical robustness, making it ideal for various electronic circuits such as audio amplifiers, voltage regulators, and power supplies. Its high current and voltage ratings enable reliable performance in applications where robustness is paramount

Key Features

Low-Voltage, Low-Current Consumption Design
High-Frequency Performance Optimized
Robust Temperature Range, Wide Operating

Application

Electronic devices
Power management
Telecom equipment

Specifications

Source Content uid	2SD2655WM-TL-E	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Application	AMPLIFIER	Configuration	SINGLE
DC Current Gain-Min (hFE)	200	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN	Surface Mount	YES
Terminal Finish	TIN BISMUTH	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	20
Transistor Element Material	SILICON