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2SJ553STR-E +BOM

Described as a P-channel single power MOSFET

2SJ553STR-E General Description

The 2SJ553STR-E power MOSFET transistor is a versatile component that offers high performance in a compact package. With a drain-source voltage of 100V and a drain current of 7A, this transistor is well-suited for a variety of high-speed switching applications. Its low on-resistance of 0.2 ohms helps to minimize power losses and improve efficiency, making it an ideal choice for high-current systems. Additionally, the fast switching speed of this transistor, with turn-on and turn-off times of 10 ns, allows for precise control of power flow in dynamic environments

Key Features

  • High-speed switching performance
  • Rugged construction and reliability
  • Fast response time and accuracy
  • Laser-trimmed resistor network
  • Precise current limiting control
  • Efficient power conversion capabilities

Application

  • Works well in motor control
  • Ideal for DC converters
  • Efficient voltage regulator

Specifications

Pkg. Type LDPAK(S)-(1) Carrier Type Embossed Tape

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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