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2SK2968 +BOM

High voltage N-channel MOSFET capable of handling up to 900V and delivering a current of 10A, with a Rds(on) value of 1.25 ohms

Manufacturer:

Toshiba
Mfr.Part #:

2SK2968
Datasheet:

2SK2968 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2SK2968

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2SK2968 General Description

The 2SK2968 is a power MOSFET transistor designed for high-speed switching applications in power supplies, inverters, motor drives, and other electronic devices that require high efficiency and reliability. It is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 7A.The 2SK2968 features a low on-state resistance of 1.5 ohms, allowing for efficient power handling and minimal power loss. This makes it suitable for applications where high power handling capability is required. The transistor also has a fast switching speed, which is essential for high-frequency operation.In terms of packaging, the 2SK2968 comes in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink. It also has an insulated tab for enhanced safety and protection against electrical shock.

Key Features

High-speed switching
Low on-resistance
Low driving power
High voltage resistance
Low leakage current
TO-3P package type
High temperature resistance
Designed for high power applications

Application

Audio amplifiers
Power supplies
Motor control systems
Inverters
Switching regulators
Electronic ballasts
Fluorescent lamp inverters
High power DC-DC converters
Automotive applications
Industrial control systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	10 A	Rds On - Drain-Source Resistance	1.25 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	150 W
Channel Mode	Enhancement	Series	2SK2968
Configuration	Single	Fall Time	25 ns
Height	20 mm	Length	15.5 mm
Product Type	MOSFET	Rise Time	25 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.5 mm
Unit Weight	0.162260 oz