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7MBR35VKD120-50 +BOM

Insulated Gate Bipolar Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • Low VCE(sat)
  • Compact Package
  • P.C.Board Mount Module
  • Converter Diode Bridge Dynamic Brake Circuit
  • RoHS compliant product

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 Case Connection ISOLATED
Collector Current-Max (IC) 35 A Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 7 V Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23 Number of Elements 7
Number of Terminals 23 Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 215 W
Rise Time-Max (tr) 600 ns Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Max (toff) 1000 ns Turn-off Time-Nom (toff) 290 ns
Turn-on Time-Max (ton) 1200 ns Turn-on Time-Nom (ton) 180 ns
VCEsat-Max 2.5 V

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