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See Technical Specifications

AOTF11S60 +BOM

1S60 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F":

Manufacturer:

Alpha and Omega Semiconductor
Mfr.Part #:

AOTF11S60
Datasheet:

AOTF11S60 Datasheet (PDF)
ECCN (US):

EAR99
Configuration:

Single
Channel Mode:

Enhancement
Channel Type:

N
EDA/CAD Models:

Request Free CAD Models for AOTF11S60

Email: [email protected]

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Tel: +852 95804164

AOTF11S60 General Description

Featuring a TO-220AB package with 3 pins, the AOTF11S60 is easy to install and suitable for use in various electronic circuits. Additionally, this transistor is RoHS compliant, making it environmentally friendly and safe for use in consumer electronics and other products

Key Features

VDS @ Tj,max 700V
IDM 45A
RDS(ON),max 0.399Ω
Qg,typ 11nC
Eoss @ 400V 2.7µJ

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive		PPAP
Category	Power MOSFET	Configuration	Single
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30	Maximum Continuous Drain Current (A)	11
Maximum Drain Source Resistance (mOhm)	399@10V	Typical Gate Charge @ Vgs (nC)	11@10V
Typical Gate Charge @ 10V (nC)	11	Typical Input Capacitance @ Vds (pF)	545@100V
Maximum Power Dissipation (mW)	38000	Typical Fall Time (ns)	20
Typical Rise Time (ns)	20	Typical Turn-Off Delay Time (ns)	59
Typical Turn-On Delay Time (ns)	20	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150	Typical Drain Source Resistance @ 25°C (mOhm)	350@10V
Mounting	Through Hole	PCB changed	3
Tab	Tab	Pin Count	3
Lead Shape	Through Hole