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BAS21VD +BOM

NXP Semiconductors

Key Features

  • High switching speed: trr ≤ 50 ns
  • Low capacitance: Cd ≤ 5 pF
  • Reverse voltage: VR ≤ 200 V
  • AEC-Q101 qualified
  • Repetitive peak reverse voltage: VRRM ≤ 250 V
  • Repetitive peak forward current: IFRM ≤ 1 A
  • Small SMD plastic package

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Forward Voltage-Max (VF) 1 V
JESD-609 Code e3 Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W Rep Pk Reverse Voltage-Max 250 V
Reverse Current-Max 100 µA Reverse Recovery Time-Max 0.05 µs
Reverse Test Voltage 200 V Surface Mount YES
Terminal Finish MATTE TIN

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