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BAT754L +BOM

NXP Semiconductors

BAT754L General Description

Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package.

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Key Features

  • Very low forward voltage
  • Guard ring protected
  • Low diode capacitance
  • Three independent diodes in a small plastic SMD package.
  • AEC-Q101 qualified
NXP Original Stock

Application

  • Ultra high-speed switching
  • Voltage clamping
  • Protection circuits
  • Blocking diodes
  • Low power consumption applications (e.g. hand-held applications).
NXP Inventory

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Forward Voltage-Max (VF) 0.2 V
JESD-609 Code e3 Operating Temperature-Max 125 °C
Operating Temperature-Min -65 °C Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 30 V Reverse Current-Max 2 µA
Reverse Test Voltage 25 V Surface Mount YES
Terminal Finish MATTE TIN

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 5,216

Minimum Order: 1

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