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BC859A +BOM

Bipolar Transistors - BJT

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BC859A General Description

Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW Surface Mount SOT-23-3 (TO-236)

Key Features

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 30 V
Configuration SINGLE DC Current Gain-Min (hFE) 125
JEDEC-95 Code TO-236 JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.31 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON Transition Frequency-Nom (fT) 100 MHz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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