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See Technical Specifications

BCM857QASZ +BOM

45 V, 100 mA PNP/PNP matched double transistors

Manufacturer:

Nexperia
Mfr.Part #:

BCM857QASZ
Datasheet:

BCM857QASZ Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

45 V
EDA/CAD Models:

Request Free CAD Models for BCM857QASZ

Email: [email protected]

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Tel: +852 95804164

BCM857QASZ General Description

PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BCM847QAS

Key Features

Reduces component count
Reduces pick and place costs
Low package height of 0.37 mm
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
AEC-Q101 qualified

Application

Current mirror
Differential amplifier

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	200 mV
Maximum DC Collector Current	100 mA	Pd - Power Dissipation	350 mW
Gain Bandwidth Product fT	175 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Continuous Collector Current	- 100 mA	DC Collector/Base Gain hfe Min	200
DC Current Gain hFE Max	450	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Part # Aliases	934660013147