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IXGH10N60AU1 +BOM

20A Insulated Gate Bipolar Transistor with 600V Breakdown Voltage, N-Channel, TO-247AD

Manufacturer:

ixys
Mfr.Part #:

IXGH10N60AU1
Datasheet:

IXGH10N60AU1 Datasheet (PDF)
Technology:

Si
Series:

IXGH10N60
Factory Pack Quantity:

30
Unit Weight:

0.229281 oz
EDA/CAD Models:

Request Free CAD Models for IXGH10N60AU1

Email: [email protected]

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IXGH10N60AU1 General Description

Features• International standard package JEDEC TO-247 AD• IGBT and anti-parallel FRED in one package• 2nd generation HDMOSTM process• Low VCE(sat) - for low on-state conduction losses• MOS Gate turn-on - drive simplicity• Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRMApplications• AC motor speed control• DC servo and robot drives• DC choppers• Uninterruptible power supplies (UPS)• Switch-mode and resonant-mode power suppliesAdvantages• Space savings (two devices in one package)• Easy to mount with 1 screw (isolated mounting screw hole)• Reduces assembly time and cost

Key Features

International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low IRM

Specifications

Product Category	IGBT Transistors	Technology	Si
Series	IXGH10N60	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Unit Weight	0.229281 oz