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BFG591,115 +BOM

91 provides high frequency performance up to 7 GHz

BFG591,115 General Description

RF Transistor NPN 15V 200mA 7GHz 2W Surface Mount SC-73

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability.

Specifications

Source Content uid BFG591,115 Part Life Cycle Code Obsolete
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection COLLECTOR Collector Current-Max (IC) 0.2 A
Collector-Emitter Voltage-Max 15 V Configuration SINGLE
DC Current Gain-Min (hFE) 60 Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1.2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 7000 MHz

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