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Compact design ensures minimal space usage in your device
SC-82ASOT-343Manufacturer:
Mfr.Part #:
CE3521M4
Datasheet:
Technology:
pHEMT FET
Frequency:
20GHz
Gain:
11.9dB
Voltage - Test:
2 V
EDA/CAD Models:
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for CE3521M4, guaranteed quotes back within
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RF Mosfet 2 V 10 mA 20GHz 11.9dB 125mW 4-Super Mini Mold
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Series | - |
Technology | pHEMT FET | Frequency | 20GHz |
Gain | 11.9dB | Voltage - Test | 2 V |
Current Rating (Amps) | 15mA | Noise Figure | 1.05dB |
Current - Test | 10 mA | Power - Output | 125mW |
Voltage - Rated | 4 V | Base Product Number | CE3521 |
Product Category: | RF JFET Transistors | Transistor Type: | pHEMT |
Technology: | GaAs | Packaging: | Bulk |
Product Type: | RF JFET Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Unit Weight: | 0.000160 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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1000+ $0.195
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Reliable solution for wireless communication systems and satellite equipme
CE3520K3
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Trans RF FET 4V 0.057A 4-Pin Micro-X T/R
CE3514M4
California Eastern Laboratories
CE3514M4 delivers 125mW power - ROHS MOSFETs
not yet tested but looks well made..