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Compact pin package suitable for space-constrained designs
SMDManufacturer:
Mfr.Part #:
CGH27015F
Datasheet:
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
2.7 GHz
Gain:
14.5 dB
EDA/CAD Models:
Please fill in the short form below and we will provide you the quotation immediately.
RF Mosfet 28 V 100 mA 3GHz 15dB 15W 440166
Product Category: | RF JFET Transistors | Transistor Type: | HEMT |
Technology: | GaN | Operating Frequency: | 2.7 GHz |
Gain: | 14.5 dB | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 120 V | Vgs - Gate-Source Breakdown Voltage: | - 10 V, 2 V |
Id - Continuous Drain Current: | 3.5 A | Output Power: | 15 W |
Maximum Drain Gate Voltage: | 28 V | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 14 W |
Mounting Style: | Screw Mount | Packaging: | Tray |
Application: | Telecom | Configuration: | Single |
NF - Noise Figure: | 3 dB | Operating Temperature Range: | - 40 C to + 150 C |
Product Type: | RF JFET Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Vgs th - Gate-Source Threshold Voltage: | - 3 V |
Unit Weight: | 0.170226 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
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The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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or fill below form to Quote for CGH27015F, guaranteed quotes back within
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90+ $7.905
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Good fees, everything is like in the description.