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See Technical Specifications

D1020UK +BOM

2 CHANNEL UHF BAND Si N-CHANNEL RF POWER MOSFET

Manufacturer:

TT Electronics
Mfr.Part #:

D1020UK
Datasheet:

D1020UK Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

25 A
Vds - Drain-Source Breakdown Voltage:

70 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

D1020UK General Description

The D1020UK is a high-power MOSFET designed for RF applications, with a maximum power dissipation of 389W and a drain-source voltage of 70V. This RF FET transistor is capable of handling continuous drain currents of up to 25A, making it suitable for high-power RF amplification tasks. Operating within a frequency range of 1MHz to 1GHz, this transistor is ideal for applications requiring high frequency operation. With a transistor case style of DR and 5 pins, the D1020UK offers versatility and ease of integration into various circuit designs

Key Features

EXTRA LOW Crss

SIMPLIFIED AMPLIFIER DESIGN

SUITABLE FOR BROAD BAND APPLICATIONS

SIMPLE BIAS CIRCUITS

LOW NOISE

HIGH GAIN10 dB MINIMUM

Application

HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	25 A
Vds - Drain-Source Breakdown Voltage	70 V	Operating Frequency	400 MHz
Gain	10 dB	Output Power	150 W
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Channel Mode	Enhancement	Configuration	Dual
Height	5.08 mm	Length	34.03 mm
Pd - Power Dissipation	389 W	Product Type	RF MOSFET Transistors
Subcategory	MOSFETs	Transistor Type	DMOS FET
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1 V to 7 V	Width	22.22 mm