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D1013UK +BOM

Trans RF MOSFET N-CH 70V 5A 3-Pin Case DP

Key Features

  • SIMPLIFIED AMPLIFIER DESIGN

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 5 A
Vds - Drain-Source Breakdown Voltage 70 V Rds On - Drain-Source Resistance 1 Ohms
Operating Frequency 500 MHz Gain 13 dB
Output Power 20 W Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Channel Mode Enhancement
Configuration Single Height 5.08 mm
Length 18.92 mm Pd - Power Dissipation 50 W
Product Type RF MOSFET Transistors Subcategory MOSFETs
Transistor Type DMOS FET Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V
Width 6.35 mm

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