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See Technical Specifications

D1207UK +BOM

RF POWER TRANSISTOR

Manufacturer:

TT Electronics
Mfr.Part #:

D1207UK
Datasheet:

D1207UK Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

10 A
Vds - Drain-Source Breakdown Voltage:

40 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

D1207UK General Description

This transistor features a unique 2-element design, making it versatile and suitable for a wide range of electronic devices and systems. The ceramic packaging provides excellent thermal management and protection against external elements, further enhancing its longevity and reliability. With a DQ configuration and 5 PIN layout, the D1207UK is easy to integrate into various circuit designs

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	10 A
Vds - Drain-Source Breakdown Voltage	40 V	Operating Frequency	400 MHz
Gain	10 dB	Output Power	20 W
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Configuration	Dual	Pd - Power Dissipation	100 W
Product Type	RF MOSFET Transistors	Subcategory	MOSFETs
Transistor Type	DMOS FET	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	20 V	Vgs th - Gate-Source Threshold Voltage	1 V to 7 V