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EDJ2116DEBG-GN-F +BOM

DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96,

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
  • - Small Footprint Area
  • Typical ESD Performance 2500 V HBM
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8542.32.00.36
Access Time-Max 0.225 ns Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96 Memory Density 2147483648 bit
Memory IC Type DDR DRAM Memory Width 16
Number of Terminals 96 Number of Words 134217728 words
Number of Words Code 128000000 Operating Temperature-Max 85 °C
Operating Temperature-Min Organization 128MX16
Output Characteristics 3-STATE Power Supplies 1.5 V
Qualification Status Not Qualified Refresh Cycles 8192
Sequential Burst Length 4,8 Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES Technology CMOS
Temperature Grade OTHER Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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