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EMX1FHAT2R +BOM

Transistor for Small Signal Applications

EMX1FHAT2R General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 180MHz 150mW Surface Mount EMT6

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Key Features

  • AEC-Q101 Qualified

Application

  • Automotive

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 150 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 180 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Qualification AEC-Q101
Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 120
DC Current Gain hFE Max 560 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 8000 Subcategory Transistors
Technology Si Part # Aliases EMX1FHA
Unit Weight 0.000528 oz

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In Stock: 9,525

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.115 $0.58
50+ $0.095 $4.75
150+ $0.084 $12.60
500+ $0.073 $36.50
2500+ $0.067 $167.50
5000+ $0.064 $320.00

The prices below are for reference only.

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