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See Technical Specifications

EMX1T2R +BOM

It has a V(BR)CEO of 50V and is classified as a low-power transistor

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

EMX1T2R
Datasheet:

EMX1T2R Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for EMX1T2R

EMX1T2R General Description

With its compact design and excellent performance, the EMX1T2R is ideal for engineers and designers looking for a reliable solution for their electronic circuits. Its integration of two transistors makes it a powerful and flexible component for various applications

Key Features

1) Two 2SC2412K chips in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	400 mV
Maximum DC Collector Current	150 mA	Pd - Power Dissipation	150 mW
Gain Bandwidth Product fT	180 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Series	EMX1
Continuous Collector Current	150 mA	DC Collector/Base Gain hfe Min	120
DC Current Gain hFE Max	560	Height	0.5 mm
Length	1.6 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	8000	Subcategory	Transistors
Technology	Si	Width	1.2 mm
Part # Aliases	EMX1	Unit Weight	0.000776 oz