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FLM0910-8F +BOM

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

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FLM0910-8F General Description

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 2 Reach Compliance Code
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 15 V Drain Current-Max (ID) 2.6 A
FET Technology JUNCTION Highest Frequency Band KU BAND
JESD-30 Code R-CDFM-F2 Number of Elements 1
Number of Terminals 2 Operating Mode DEPLETION MODE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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