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FMH07N90E +BOM

Power Field-Effect Transistor, 7A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), 3 PIN

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FMH07N90E General Description

Power Field-Effect Transistor, 7A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), 3 PIN

Key Features

  • Low on-state resistance
  • Low switching loss
  • easy to use (more controllabe switching dV/dt by Rg)

Specifications

Part Life Cycle Code Not Recommended Pin Count 3
Reach Compliance Code ECCN Code EAR99
Additional Feature LOW NOISE Avalanche Energy Rating (Eas) 396.3 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 7 A Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 145 W Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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