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FSX017WF +BOM

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WF, 2 PIN

FSX017WF General Description

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WF, 2 PIN

Key Features

  • Three Integrated Phase-locked Loops
  • Ultra Wide Divide Counters (8-bit Q, 11-bit P, and 7-bit Post Divide)
  • Improved Linear Crystal Load Capacitors
  • Flash Programmability
  • Field Programmable
  • Low-jitter, High-accuracy Outputs
  • Power Management Options (Shutdown, OE, Suspend)
  • Configurable Crystal Drive Strength
  • Frequency Select through three External LVTTL Inputs
  • 3.3 V Operation
  • 16-pin TSSOP andSOIC Packages
  • CyClocksRT™ Support

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 2 Reach Compliance Code
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 12 V FET Technology JUNCTION
Highest Frequency Band X BAND JESD-30 Code R-CDFM-F2
Number of Elements 1 Number of Terminals 2
Operating Mode DEPLETION MODE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material GALLIUM ARSENIDE

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