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G2R1000MT33J +BOM
This TO-263-7 surface mount component can handle up to 4A of current and dissipate 74W of power
TO-263-8,D2PAK(7Leads+Tab),TO-263CA-
Manufacturer:
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Mfr.Part #:
G2R1000MT33J
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Datasheet:
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Series:
G2R™
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FET Type:
N-Channel
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Technology:
SiCFET (Silicon Carbide)
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Drain To Source Voltage (Vdss):
3300 V
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EDA/CAD Models:
Availability: 9881 PCS
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G2R1000MT33J General Description
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
Specifications
Series | G2R™ | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 3300 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V | Vgs(th) (Max) @ Id | 3.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V | Vgs (Max) | +20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V | Power Dissipation (Max) | 74W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | G2R1000 |
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In Stock: 9,881
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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