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GT50J325 +BOM

Reliable N-Channel IGBT for demanding industrial application

GT50J325 General Description

IGBT, 600V, TO-3P(LH)

Key Features

  • Fourth generation IGBT
  • Enhancement mode type
  • Fast switching
  • Operating frequency up to 50KHz
  • Maximum collector emitter saturation voltage of 2.45V
  • FRD included between emitter and collector
  • Collector emitter voltage VCES of 600V
  • DC collector current of 50A
  • Junction temperature of 150°C
  • Collector power dissipation of 240W

Application

  • Power Management
  • Consumer Electronics
  • Portable Devices
  • Industrial

Specifications

Source Content uid GT50J325 Pbfree Code No
Part Life Cycle Code End Of Life Pin Count 3
Reach Compliance Code ECCN Code EAR99
Additional Feature HIGH SPEED Case Connection COLLECTOR
Collector Current-Max (IC) 50 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 240 W Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 430 ns Turn-on Time-Nom (ton) 240 ns

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