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GT8Q101 +BOM

IGBT Transistors Pb 3PN IGBT PP1,DISCON(03-04)/PHASE-OUT(04-07)/OBSOLETE(04-10),DISCON-->2006-07-31,PHASEOUT-->2006-09-30

GT8Q101 General Description

IGBT Transistors Pb 3PN IGBT PP1,DISCON(03-04)/PHASE-OUT(04-07)/OBSOLETE(04-10),DISCON-->2006-07-31,PHASEOUT-->2006-09-30

Key Features

    Specifications

    Source Content uid GT8Q101 Part Life Cycle Code Obsolete
    Pin Count 3 Reach Compliance Code
    ECCN Code EAR99 HTS Code 8541.29.00.95
    Additional Feature HIGH SPEED Case Connection COLLECTOR
    Collector Current-Max (IC) 8 A Collector-Emitter Voltage-Max 1200 V
    Configuration SINGLE Fall Time-Max (tf) 500 ns
    Gate-Emitter Thr Voltage-Max 6 V Gate-Emitter Voltage-Max 20 V
    JESD-30 Code R-PSFM-T3 JESD-609 Code e0
    Number of Elements 1 Number of Terminals 3
    Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
    Power Dissipation Ambient-Max 100 W Power Dissipation-Max (Abs) 150 W
    Qualification Status Not Qualified Rise Time-Max (tr) 600 ns
    Surface Mount NO Terminal Finish Tin/Lead (Sn/Pb)
    Terminal Form THROUGH-HOLE Terminal Position SINGLE
    Transistor Application MOTOR CONTROL Transistor Element Material SILICON
    VCEsat-Max 4 V

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