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IRF640 +BOM

High-power MOSFET for industrial control application

email Email: [email protected]
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tel Tel: +852 95804164

IRF640 General Description

N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
Channel Mode Enhancement Series IRF640
Configuration Single Fall Time 35 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 50 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 46 ns Typical Turn-On Delay Time 13 ns
Width 4.7 mm Unit Weight 0.068784 oz

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In Stock: 6,626

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.274 $0.27
10+ $0.241 $2.41
50+ $0.210 $10.50
100+ $0.192 $19.20
500+ $0.184 $92.00
1000+ $0.180 $180.00

The prices below are for reference only.

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