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IRF640N +BOM

High-power N-channel MOSFET for demanding applications

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRF640N General Description

In the realm of power management, the IRF640N stands out as a top performer. Its wide portfolio of devices caters to a range of applications, including inverters, load switches, and more. With a focus on efficiency and reliability, the IRF640N is a valuable tool for engineers seeking to optimize their designs. Whether you're working on a complex SMPS system or a simple battery-powered application, the IRF640N has the capabilities to support your project effectively

Specifications

Tj max 175.0 °C Mounting THT
Polarity N Ptot max 150.0 W
RthJC max 1.0 K/W VDS max 200.0 V
VGS max 20.0 V RDS (on) max 150.0 mΩ
VGS(th) max 4.0 V VGS(th) min 2.0 V
ID max 18.0 A Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 5,722

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.285 $1.42
50+ $0.232 $11.60
150+ $0.209 $31.35
500+ $0.180 $90.00
2000+ $0.167 $334.00
5000+ $0.159 $795.00

The prices below are for reference only.

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