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IRF730 +BOM

5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

email Email: [email protected]
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tel Tel: +852 95804164

IRF730 General Description

N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • Specifications

    Product Category MOSFET Technology Si
    Mounting Style Through Hole Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
    Id - Continuous Drain Current 5.5 A Rds On - Drain-Source Resistance 1 Ohms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 75 W
    Channel Mode Enhancement Series IRF730
    Configuration Single Fall Time 15 ns
    Height 16.3 mm Length 10.67 mm
    Product Type MOSFET Rise Time 20 ns
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 35 ns Typical Turn-On Delay Time 10 ns
    Width 4.7 mm Unit Weight 0.068784 oz

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    In Stock: 5,500

    Minimum Order: 1

    Qty. Unit Price Ext. Price
    5+ $0.190 $0.95
    50+ $0.154 $7.70
    150+ $0.140 $21.00
    500+ $0.120 $60.00
    2000+ $0.111 $222.00
    5000+ $0.106 $530.00

    The prices below are for reference only.

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