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IXBL20N300C +BOM

Monolithic Bipolar MOS Transistor

IXBL20N300C General Description

IGBT 3000 V 50 A 417 W Through Hole ISOPLUSi5-Pak™

Specifications

Series BIMOSFET™ IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 430 A Vce(on) (Max) @ Vge, Ic 6V @ 15V, 20A
Power - Max 417 W Switching Energy 23mJ (on), 2.6mJ (off)
Input Type Standard Gate Charge 425 nC
Td (on/off) @ 25°C 33ns/370ns Test Condition 1500V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr) 864 ns Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number IXBL20

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