This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXFN130N30 +BOM

IXFN130N30 specs

Manufacturer:

IXYS
Mfr.Part #:

IXFN130N30
Datasheet:

IXFN130N30 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IXFN130N30

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXFN130N30 General Description

The IXFN130N30 MOSFET is a key component of the HiPerFET™ Standard series, renowned for its superior performance in both hard switching and resonant mode applications. Featuring low gate charge and excellent ruggedness, this MOSFET also boasts a fast intrinsic diode, enhancing efficiency and reliability in power electronics systems. Moreover, the availability of isolated types in standard industrial packages further enhances the versatility and applicability of this series

Key Features

Long Lifespan Reliability
Fault-Tolerant Control
Durable Construction
Compact and Lightweight

Application

Seamless power regulation
Effortless maintenance
Optimal power utilization

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	4000 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	300 V
Drain Current-Max (ID)	130 A	Drain-source On Resistance-Max	0.022 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PUFM-X4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	700 W
Pulsed Drain Current-Max (IDM)	520 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	NICKEL
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	SWITCHING	Transistor Element Material	SILICON