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IXFN48N50 +BOM
With a power dissipation of 520W
SOT-227-4-
Manufacturer:
-
Mfr.Part #:
IXFN48N50
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Datasheet:
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Drain-Source Voltage (V):
500
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Maximum On-Resistance @ 25 ℃ (Ohm):
0.1
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Continuous Drain Current @ 25 ℃ (A):
48
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Gate Charge (nC):
270
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EDA/CAD Models:
Availability: 5859 PCS
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IXFN48N50 General Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.
Key Features
- International Standard Packages
- High Current Handling Capability
- Low R
- DS(on)
- HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
Application
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC Motor Drives
- Temperature and Lighting Controls
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.1 |
Continuous Drain Current @ 25 ℃ (A) | 48 | Gate Charge (nC) | 270 |
Input Capacitance, CISS (pF) | 8400 | Thermal resistance [junction-case] (K/W) | 0.24 |
Configuration | Single | Power Dissipation (W) | 521 |
Maximum Reverse Recovery (ns) | 250 | Sample Request | No |
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In Stock: 5,859
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $27.731 | $27.73 |
30+ | $26.810 | $804.30 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXFN48N50, guaranteed quotes back within 12hr.