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IXGH32N60BU1 +BOM

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AD

email Email: [email protected]
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tel Tel: +852 95804164

IXGH32N60BU1 General Description

IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 80 ns Power dissipation: 200 W

ixgh32n60bu1 ixgh32n60bu1
ixgh32n60bu1 ixgh32n60bu1
ixgh32n60bu1

Specifications

Mount Through Hole Number of Pins 3
Weight 6.500007 g Collector Emitter Breakdown Voltage 600 V
Collector Emitter Voltage (VCEO) 600 V Current Rating 60 A
Element Configuration Single Max Collector Current 60 A
Max Operating Temperature 150 °C Max Power Dissipation 200 W
Min Operating Temperature -55 °C Packaging Bulk
Reverse Recovery Time 50 ns Rise Time 20 ns
Turn-Off Delay Time 100 ns Turn-On Delay Time 25 ns
Voltage Rating (DC) 600 V

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

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M
M**n 02/22/2022

There is a suspicion that the postman was walking to novosibirsk. the batteries came for a month, and the indicators are forty-five days. checked. Everything is fine, everything works.

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