This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXKN75N60C +BOM

N-channel power MOSFET for high voltage applications, capable of handling up to 75A of current with a voltage rating of 600V

Manufacturer:

IXYS
Mfr.Part #:

IXKN75N60C
Datasheet:

IXKN75N60C Datasheet (PDF)
Product:

Power MOSFET Modules
Type:

CoolMOS Power MOSFET
Technology:

Si
Vf - Forward Voltage:

900 mV
EDA/CAD Models:

Request Free CAD Models for IXKN75N60C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXKN75N60C General Description

The TO-247 package housing of IXKN75N60C not only provides excellent thermal performance but also ensures reliability in operation. Thanks to its design, this MOSFET can be easily mounted and heat sinked, allowing for optimal heat dissipation during operation. This feature is crucial in maintaining the device's performance and longevity in demanding applications

Key Features

The IXKN75N60C is an advanced power transistor
It features a high voltage rating and current handling ability
This makes it suitable for various industrial applications

Application

Optimal for energy savings
Robust and versatile design
Smooth operation guaranteed

Specifications

Product Category	Discrete Semiconductor Modules	Product	Power MOSFET Modules
Type	CoolMOS Power MOSFET	Technology	Si
Vf - Forward Voltage	900 mV	Vr - Reverse Voltage	350 V
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Mounting Style	Chassis Mount
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	IXKN75N60	Configuration	Single
Fall Time	10 ns	Height	12.22 mm
Id - Continuous Drain Current	75 A	Length	38.23 mm
Number of Channels	1 Channel	Product Type	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance	30 mOhms	Rise Time	30 ns
Factory Pack Quantity	10	Subcategory	Discrete Semiconductor Modules
Tradename	CoolMOS	Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	110 ns	Typical Turn-On Delay Time	20 ns
Vds - Drain-Source Breakdown Voltage	600 V	Vgs th - Gate-Source Threshold Voltage	3.9 V
Width	25.42 mm	Unit Weight	1.058219 oz