This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXKR25N80C +BOM

25 amp 800 volt N-channel transistor with 3-pin configuration and tab connection

Manufacturer:

IXYS
Mfr.Part #:

IXKR25N80C
Datasheet:

IXKR25N80C Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

670 mJ
EDA/CAD Models:

Request Free CAD Models for IXKR25N80C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXKR25N80C General Description

Super Junction technology sets the IXKR25N80C Power MOSFETs apart by ensuring the lowest RDS(on) in the 600V-800V class of MOSFETs. With internal DCB isolation, these devices streamline assembly and minimize thermal resistance from junction to heat sink. Additionally, their Avalanche rating guarantees rugged operation, making them a reliable choice for various industrial applications

Key Features

Fully modularized design
Ultra-low thermal noise
Silicon on Thin Film (SOTF)

Application

Smart power supply
Energy-saving UPS
Effective PFC

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	670 mJ
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	800 V	Drain Current-Max (ID)	25 A
Drain-source On Resistance-Max	0.15 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSIP-T3	JESD-609 Code	e1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN SILVER COPPER	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON