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See Technical Specifications

IXSH30N60C +BOM

N-channel IGBT semiconductor chip, TO-247AD packaging, capable of handling 600 volts and 55 amperes

Manufacturer:

Ixys
Mfr.Part #:

IXSH30N60C
Datasheet:

IXSH30N60C Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for IXSH30N60C

IXSH30N60C General Description

IGBT PT 600 V 55 A 200 W Through Hole TO-247AD

Key Features

Precise voltage regulation
High power density devices
Minimized thermal runaways
Enhanced system flexibility

Application

Electronic devices
Renewable energy
Telecommunication systems

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.5 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXSH30N60
Continuous Collector Current	55 A	Continuous Collector Current Ic Max	55 A
Height	21.46 mm	Length	16.26 mm
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Width	5.3 mm
Unit Weight	0.229281 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

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Ratings and Reviews

N**s 09/19/2021

Received version is 4.0. Version described is 3.0. It all seems to work, but you need to select "ATMega328P (Old Bootloader)" to make it work. Tech support is non-existent.