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IXSK30N60BD1 +BOM

IGBT Transistors 55 Amps 600V 2 Rds

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IXSK30N60BD1 General Description

IGBT 600 V 55 A 200 W Through Hole TO-264AA (IXSK)

ixsk30n60bd1 ixsk30n60bd1
ixsk30n60bd1 ixsk30n60bd1

Specifications

Product Category: IGBT Transistors Technology: Si
Mounting Style: Through Hole Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V Maximum Gate Emitter Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Series: IXSK30N60 Packaging: Tube
Continuous Collector Current Ic Max: 55 A Height: 26.16 mm
Length: 19.96 mm Product Type: IGBT Transistors
Factory Pack Quantity: 25 Subcategory: IGBTs
Width: 5.13 mm Unit Weight: 0.352740 oz

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