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IXYN100N65C3H1 +BOM

The IXYN100N65C3H1 module houses a single IGBT transistor capable of withstanding voltages up to 650V and currents up to 90A

IXYN100N65C3H1 General Description

IGBT Module PT Single 650 V 166 A 600 W Chassis, Stud Mount SOT-227B

Specifications

Series XPT™, GenX3™ IGBT Type PT
Configuration Single Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 166 A Power - Max 600 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 70A Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 4.98 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis, Stud Mount Base Product Number IXYN100

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