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J108 +BOM
JFET N-Channel 25 V 625 mW Through Hole TO-92-3
TO-92-
Manufacturer:
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Mfr.Part #:
J108
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Datasheet:
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FET Type:
N-Channel
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Voltage - Breakdown (V(BR)GSS):
25 V
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Current - Drain (Idss) @ Vds (Vgs=0):
80 mA @ 15 V
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Voltage - Cutoff (VGS Off) @ Id:
3 V @ 10 nA
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EDA/CAD Models:
Availability: 5325 PCS
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J108 General Description
The J108 is an N-channel JFET. N-channel JFETs are the most common type of JFET and are characterized by their ability to conduct current when a negative voltage is applied to the gate terminal. They are typically used in electronic circuits for signal amplification and switching applications.
Key Features
- Polarity: N-Channel (NPN).
- Drain-Source Voltage (VDS): The maximum voltage that can be applied between the drain and source terminals without causing breakdown.
- Gate-Source Voltage (VGS): The voltage applied between the gate and source terminals controls the JFET's current flow.
- Gate Current (IG): The small current that flows into the gate terminal controls the JFET's operation.
- Transconductance (gm): Transconductance is a measure of the JFET's ability to amplify signals.
- Low Input Impedance: JFETs typically have a high input impedance, making them suitable for many high-impedance applications.
Application
- Amplifiers
- Signal Switching
- Voltage-Controlled Resistors
- Voltage Buffers
- Oscillators
- Sensor Interface
- Low-Noise Applications
Specifications
Category | Discrete Semiconductor ProductsTransistorsJFETs | Series | - |
FET Type | N-Channel | Voltage - Breakdown (V(BR)GSS) | 25 V |
Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 15 V | Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
Input Capacitance (Ciss) (Max) @ Vds | - | Resistance - RDS(On) | 8 Ohms |
Power - Max | 625 mW | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | J108 |
Product Category | JFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Configuration | Single | Vds - Drain-Source Breakdown Voltage | 15 V |
Vgs - Gate-Source Breakdown Voltage | - 25 V | Gate-Source Cutoff Voltage | - 10 V |
Drain-Source Current at Vgs=0 | 80 mA | Id - Continuous Drain Current | 1 uA |
Rds On - Drain-Source Resistance | 8 Ohms | Pd - Power Dissipation | 360 mW |
Product Type | JFETs | Factory Pack Quantity | 1 |
Subcategory | Transistors | Type | JFET |
Unit Weight | 0.016000 oz |
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