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See Technical Specifications

JS28F256M29EWHA +BOM

The JS28F256M29EWHA NOR flash memory device is housed in a TSOP-56 package and meets RoHS environmental standards

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F256M29EWHA
Datasheet:

JS28F256M29EWHA Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

56
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for JS28F256M29EWHA

Email: [email protected]

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Tel: +852 95804164

JS28F256M29EWHA General Description

With its comprehensive feature set and high-performance capabilities, the JS28F256M29EWHA represents a significant leap forward in NAND Flash technology. Its efficient data retrieval and storage capabilities make it a standout choice for designers and engineers looking for a reliable and high-performance memory solution. From its extended temperature range operation to its advanced wear-leveling algorithms, this chip is poised to deliver exceptional results in a wide range of applications

Key Features

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	56	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	110 ns	Alternate Memory Width	8
Command User Interface	YES	Common Flash Interface	YES
Data Polling	YES	JESD-30 Code	R-PDSO-G56
JESD-609 Code	e3	Length	18.4 mm
Memory Density	268435456 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	256	Number of Terminals	56
Number of Words	16777216 words	Number of Words Code	16000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	16MX16
Page Size	16/32 words	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	3 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.2 mm	Sector Size	128K
Standby Current-Max	0.00021 A	Supply Current-Max	0.031 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Toggle Bit	YES
Type	NOR TYPE	Width	14 mm