This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

JS28F256M29EWLA +BOM

Thin small outline package 56-pin

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F256M29EWLA
Datasheet:

JS28F256M29EWLA Datasheet (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for JS28F256M29EWLA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F256M29EWLA General Description

Moreover, this NAND flash memory device features essential functionalities like wear leveling, bad block management, and error correction codes, ensuring data integrity and reliability. Its compact design and low power consumption make it ideal for use in portable and battery-powered devices, making it a dependable choice for demanding applications

Key Features

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Specifications

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	256Mbit	Memory Organization	32M x 8, 16M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	110ns	Access Time	110 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount