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DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96,
BGAManufacturer:
Mfr.Part #:
K4B1G1646E-HCH9
Datasheet:
Package/Case:
BGA
Product Type:
EDA/CAD Models:
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JEDEC standard 1.5V0.075V Power Supply VDDQ = 1.5V0.075V 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 8 Banks Posted CAS Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10, 11 Programmable Additive Latency: 0, CL-2 or CL-1 clock Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data-Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95 C Asynchronous Reset
Product Category | Memory ICs |
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