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K4B2G0846C-HCH9 +BOM

DRAM Chip DDR3 SDRAM 2G-Bit 256Mx8 1.5V

Avaq Semiconductor offers the highly versatile and reliable K4B2G0846C-HCH9 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  K4B2G0846C-HCH9.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.36
Clock Frequency-Max (fCLK) 667 MHz I/O Type COMMON
Interleaved Burst Length 8 JESD-30 Code R-PBGA-B78
JESD-609 Code e1 Memory Density 2147483648 bit
Memory IC Type DDR3 DRAM Memory Width 8
Number of Terminals 78 Number of Words 268435456 words
Number of Words Code 256000000 Operating Temperature-Max 85 °C
Operating Temperature-Min Organization 256MX8
Output Characteristics 3-STATE Power Supplies 1.5 V
Qualification Status Not Qualified Refresh Cycles 8192
Sequential Burst Length 8 Standby Current-Max 0.012 A
Supply Current-Max 0.21 mA Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES Technology CMOS
Temperature Grade OTHER Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM

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