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See Technical Specifications

K4B2G1646F-BCNB +BOM

Product name: K4B2G1646F-BCNB, FBGA-96 DDR SDRAM ROHS

Manufacturer:

Samsung Electronics
Mfr.Part #:

K4B2G1646F-BCNB
Datasheet:

K4B2G1646F-BCNB Datasheet (PDF)
ECCN (US):

EAR99
HTS:

8542.32.00.36
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for K4B2G1646F-BCNB

Email: [email protected]

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Tel: +852 95804164

K4B2G1646F-BCNB General Description

Featuring a voltage of 1.5V, the K4B2G1646F-BCNB is not only powerful but also environmentally friendly, making it ideal for use in a variety of electronics products. Its burst length of 8, interface of 96-ball FBGA, and CAS latency of 9 are just a few of the features that set this memory chip apart from the rest. Upgrade your devices with the Samsung K4B2G1646F-BCNB and experience the ultimate in memory performance and reliability

Key Features

High-capacity storage solutions
Low-latency and high-bandwidth performance
Wide range of compatibility supported
Long-lasting durability guaranteed

Application

Phones and tablets
Smart cameras
Connected appliances
Modern devices
IoT gadgets
High-tech tools

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
HTS	8542.32.00.36	Automotive	No
PPAP	No	DRAM Type	DDR3 SDRAM
Chip Density (bit)	2G	Organization	128Mx16
Number of Internal Banks	8	Number of Words per Bank	16M
Number of Bits/Word (bit)	16	Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	2133	Maximum Access Time (ns)	0.18
Address Bus Width (bit)	17	Interface Type	SSTL_1.5
Minimum Operating Supply Voltage (V)	1.425	Maximum Operating Supply Voltage (V)	1.575
Operating Current (mA)	145	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95	Number of I/O Lines (bit)	16
Mounting	Surface Mount	PCB changed	96
Pin Count	96	Lead Shape	Ball