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See Technical Specifications

K4B4G0846E-BYMA +BOM

78-Pin FBGA DRAM Chip for Low Voltage DDR3L SDRAM

Manufacturer:

Samsung Electronics
Mfr.Part #:

K4B4G0846E-BYMA
Datasheet:

K4B4G0846E-BYMA Datasheet (PDF)
ECCN (US):

EAR99
HTS:

8542.32.00.36
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for K4B4G0846E-BYMA

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K4B4G0846E-BYMA General Description

K4B4G0846E-BYMA is a specific type of electronic component known as a memory chip. More specifically, it is a 4Gb DDR4 SDRAM chip manufactured by Samsung Electronics.

Key Features

It has a capacity of 4 gigabits (equivalent to 512 megabytes) and utilizes DDR4 technology.
The maximum data rate supported by this chip is 2400 Mbps.
It operates at a standard voltage of 2V.
The package type for this specific chip is FBGA (Fine-Pitch Ball Grid Array).

Application

The K4B4G0846E-BYMA memory chip is commonly used in computer systems, servers, laptops, and other electronic devices.
It plays a crucial role in storing and accessing data, helping to improve the overall performance of these devices.

Specifications

ECCN (US)	EAR99	Part Status	Active
HTS	8542.32.00.36	Automotive	No
PPAP	No	DRAM Type	DDR3L SDRAM
Chip Density (bit)	4G	Organization	512Mx8
Number of Internal Banks	8	Number of Words per Bank	64M
Number of Bits/Word (bit)	8	Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	1866	Maximum Access Time (ns)	0.195
Address Bus Width (bit)	19	Minimum Operating Supply Voltage (V)	1.283\|1.425
Maximum Operating Supply Voltage (V)	1.45\|1.575	Operating Current (mA)	64
Minimum Operating Temperature (°C)	0	Maximum Operating Temperature (°C)	95
Supplier Temperature Grade	Commercial	Number of I/O Lines (bit)	8
Mounting	Surface Mount	PCB changed	78
Pin Count	78	Lead Shape	Ball