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K4M281633H-BN75 +BOM

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54

Avaq Semiconductor offers the highly versatile and reliable K4M281633H-BN75 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  K4M281633H-BN75.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.02 Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 133 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code S-PBGA-B54
JESD-609 Code e3 Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM Memory Width 16
Moisture Sensitivity Level 1 Number of Terminals 54
Number of Words 8388608 words Number of Words Code 8000000
Operating Temperature-Max 85 °C Operating Temperature-Min -25 °C
Organization 8MX16 Output Characteristics 3-STATE
Qualification Status Not Qualified Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP Standby Current-Max 0.0005 A
Supply Current-Max 0.07 mA Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish MATTE TIN Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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