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K4S643232H-UC60 +BOM

Synchronised performance for efficient processing

K4S643232H-UC60 General Description

The Samsung K4S643232H-UC60 is a cutting-edge SDRAM chip that offers high-speed and high-capacity memory capabilities for a wide range of electronic devices. With a generous capacity of 128 megabits, this chip is ideal for demanding applications such as desktop computers, laptops, servers, and networking equipment. Its operating frequency of 143MHz ensures fast and efficient data processing, making it a reliable choice for performance-driven tasks

K4S643232H-UC60

Key Features

  • This is a test of synchronous DRAM memory chip
  • Synchronous DRAM memory chips for computer applications
  • Memory and performance for CPU-based systems
  • High-speed memory solutions for computing devices
  • Data processing and storage technologies
  • Microprocessor and peripheral interfaces and protocols

Application

  • High-speed memory chip
  • Perfect for data-heavy tasks
  • Ideal for multimedia streaming

Specifications

Part Life Cycle Code Obsolete ECCN Code EAR99
HTS Code 8542.32.00.02 Access Time-Max 5.5 ns
Clock Frequency-Max (fCLK) 166 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code R-PDSO-G86
JESD-609 Code e6 Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM Memory Width 32
Moisture Sensitivity Level 3 Number of Terminals 86
Number of Words 2097152 words Number of Words Code 2000000
Operating Temperature-Max 70 °C Organization 2MX32
Output Characteristics 3-STATE Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP Standby Current-Max 0.002 A
Supply Current-Max 0.15 mA Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES Technology CMOS
Temperature Grade COMMERCIAL Terminal Finish TIN BISMUTH
Terminal Form GULL WING Terminal Pitch 0.5 mm
Terminal Position DUAL

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