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K4S511632B-UC75 +BOM

32X16 Synchronous DRAM chip with 5.4ns speed, CMOS construction, and PDSO54 package

  • Manufacturer:

    Samsung Semiconductor

  • Mfr.Part #:

    K4S511632B-UC75

  • Datasheet:

    K4S511632B-UC75 Datasheet (PDF) pdf-icon

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Reach Compliance Code:

    compliant

  • ECCN Code:

    EAR99

K4S511632B-UC75 General Description

The K4S511632B-UC75 from Samsung Electronics is a top-of-the-line SDRAM chip designed to meet the high-speed memory requirements of today's electronic devices. With a storage capacity of 16MB and a DDR architecture, this chip offers exceptional data transfer rates of up to 266MB/s, ensuring smooth and efficient performance. Its programmable burst length feature and low CAS latency provide flexibility in accessing data, making it an ideal choice for desktops, laptops, servers, and networking equipment. The K4S511632B-UC75's temperature range of -40°C to 85°C makes it suitable for operation in various environmental conditions

Key Features

  • Fully buffered memory architecture
  • Low latency and high bandwidth
  • Data transfer speed up to 166MHz
  • Precision timing and clock management
  • Power consumption reduced by 50%
  • Enhanced error detection and correction

Application

  • Futuristic appliances
  • Modern computing
  • Intelligent systems

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.32.00.28 Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 133 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code R-PDSO-G54
Memory Density 536870912 bit Memory IC Type SYNCHRONOUS DRAM
Memory Width 16 Moisture Sensitivity Level 3
Number of Terminals 54 Number of Words 33554432 words
Number of Words Code 32000000 Operating Temperature-Max 70 °C
Organization 32MX16 Output Characteristics 3-STATE
Peak Reflow Temperature (Cel) 260 Power Supplies 3.3 V
Qualification Status Not Qualified Refresh Cycles 8192
Sequential Burst Length 1,2,4,8 Standby Current-Max 0.002 A
Supply Current-Max 0.2 mA Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES Technology CMOS
Temperature Grade COMMERCIAL Terminal Form GULL WING
Terminal Pitch 0.8 mm Terminal Position DUAL

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