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K4M56163PG-BG75 +BOM

DRAM Chip Mobile SDRAM 256Mbit 16Mx16 1.8V 54-Pin FBGA Tray / 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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K4M56163PG-BG75 General Description

DRAM Chip Mobile SDRAM 256Mbit 16Mx16 1.8V 54-Pin FBGA Tray / 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Key Features

  • 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down) DQM for masking. Auto refresh. 64ms refresh period (8K cycle) Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.32.00.24 Access Time-Max 6 ns
Clock Frequency-Max (fCLK) 133 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code S-PBGA-B54
JESD-609 Code e3 Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM Memory Width 16
Moisture Sensitivity Level 1 Number of Terminals 54
Number of Words 16777216 words Number of Words Code 16000000
Operating Temperature-Max 85 °C Operating Temperature-Min -25 °C
Organization 16MX16 Output Characteristics 3-STATE
Power Supplies 1.8 V Qualification Status Not Qualified
Refresh Cycles 8192 Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A Supply Current-Max 0.075 mA
Supply Voltage-Nom (Vsup) 1.8 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish MATTE TIN Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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