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K4N56163QI-ZC25 +BOM

DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84,

Avaq Semiconductor offers the highly versatile and reliable K4N56163QI-ZC25 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  K4N56163QI-ZC25.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8542.32.00.24
Access Time-Max 0.4 ns Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 JESD-609 Code e1
Memory Density 268435456 bit Memory IC Type GDDR2 DRAM
Memory Width 16 Moisture Sensitivity Level 3
Number of Terminals 84 Number of Words 16777216 words
Number of Words Code 16000000 Operating Temperature-Max 95 °C
Operating Temperature-Min Organization 16MX16
Output Characteristics 3-STATE Peak Reflow Temperature (Cel) 260
Power Supplies 1.8 V Qualification Status Not Qualified
Refresh Cycles 8192 Sequential Burst Length 4,8
Standby Current-Max 0.01 A Supply Current-Max 0.26 mA
Supply Voltage-Nom (Vsup) 1.8 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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