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High-speed memory chip with 64MX16 capacity
BGA-84Manufacturer:
SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:
K4T1G164QE-HCE6
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
HTS Code:
8542.32.00.32
EDA/CAD Models:
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Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.45 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 333 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B84 |
JESD-609 Code | e1 | Length | 12.5 mm |
Memory Density | 1073741824 bit | Memory IC Type | DDR2 DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 84 | Number of Words | 67108864 words |
Number of Words Code | 64000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 64MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | 260 | Qualification Status | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 4,8 |
Standby Current-Max | 0.01 A | Supply Current-Max | 0.185 mA |
Supply Voltage-Max (Vsup) | 1.9 V | Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | OTHER |
Terminal Finish | TIN SILVER COPPER | Terminal Form | BALL |
Terminal Pitch | 0.8 mm | Terminal Position | BOTTOM |
Width | 7.5 mm |
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